FISSION | DC and RF Sputtering Source
FISSION | Magnetron Sputtering
The Fission series of magnetron sputtering systems allows users to switch between thin film DC/RF sputtering without specialised tools or lengthy downtime. The Fission deposition source is a module of the modular HEX system that uses quick-release connectors for cooling and water connections, making set-up simple and fast. The HEX system provides the framework for multiple physical vapour deposition techniques, including DC/RF sputtering.
The system accommodates reactive sputtering through the introduction of the reactive gas directly into the chamber or via a separate gas feed. We recommend using the separate feed to maintain the correct partial pressure of the reactive gas at the target.
The Fission series allows the sputtering of all solid metals, magnetic materials, insulators, and semiconductors and can even process multiple sources to grow a composite thin film.
The HEX system even supports high-power impulse magnetron sputtering (HiPIMS), resulting in the target molecules arriving at the substrate as ions instead of neutral atoms. The main advantage of HiPIMS is that it allows for excellent control over the film’s microstructure, phase composition, and optical properties.
Sputter Deposition Technique
Sputter deposition is a widely-used thin film deposition. A plasma is ignited above a negatively-biased ‘target’ which has the effect that ions are drawn from the plasma and accelerated towards the target material. On impact, the argon ions eject atoms/molecules from the surface – a process known as sputtering. The sputtered material forms a vapour, which can be re-condensed on a substrate to form a thin film coating.
Technical Specification
| Fission- Magnetron Sputtering Source | ||
|---|---|---|
|
Target Diameter
|
50mm (2")
|
|
|
Maximum Target Thickness
|
6mm (1mm magnetics with strong magnets)
|
|
|
DC Power Supply
|
720W (600V, 1.2A)
|
|
|
RF Power Supply
|
300W (13.56MHz)
|
|
|
Gas Feed
|
Integral through gas hood
|
|
|
Cooling:
|
Water (min 0.5l/min)
|
|
Our DC/RF Magnetron Sputtering System FAQs
What are the steps involved in the sputtering process?
The steps of the RF and DC magnetron sputtering process differ slightly, but will contain the following steps:
A vacuum environment is created, containing the target material, the substrate and an inert gas. The gas becomes charged upon exposure to the current.
The sputtering target materials will act as one node, while the substrate acts as the other.
The gas flow ionises and collides with the surface of the target.
Collisions caused in this process knock off metal ions into the plasma.
The charged plasma particles then condense on the substrate surface, completing the thin film deposition.
The charge distribution will vary whether you are using DC or RF techniques. The negatively-charged target material will remain as such in the DC process but alternate with the RF.
What kind of gas is used in the sputtering process?
Argon is often the gas used within the magnetron sputtering system. Other inert gases, however, may also be used.
Why is argon used in sputtering?
Argon is used in the thin film deposition process for a few reasons:
It has a large atomic mass (39.948 u)
As an inert gas, it is not reactive
Its affordability
What is DC and RF sputtering?
Direct current (DC) and radio frequency (RF) sputtering are thin film deposition techniques that are covered in extensive detail within our full guide on DC sputtering. Please take a look to learn more.
