Reactive Sputtering

THE HEX SERIES

Simple Metals to Complex Compounds

Through sputtering, many different films can be generated from simple metals to complex compounds using elemental or compound targets. Often, when making a compound film, the resultant film stoichiometry (ratio of elements) deposited can differ from the target used due to process limitations. During the sputtering process, the target’s surface is broken up into its constituent elements and vaporised into a largely atomistic flux. Elements in compound films, such as oxygen from oxides and nitrogen from nitride compounds, may be pumped away from the chamber, leaving the film with a lower proportion of oxygen/nitrogen than originally intended. 

A key way to combat this issue is through reactive sputtering – this process involves introducing a reactive gas that readily reacts with the deposited film’s surface directly into the vacuum chamber to control the stoichiometry and ensure a fully reacted film. 

Reactive sputtering can also provide overall cost efficiencies associated with depositing a film. Generally, RF sputtering supplies have higher capital costs and slower deposition rates than their DC counterparts, but with the added benefit of being able to deposit non-conducting (dielectric) samples. However, reactive DC sputtering can offer a go-around for depositing dielectric films by using a metallic target and introducing a reactive gas to form the compound at the substrate, rather than relying solely on the recombination of the constituent target elements at the correct composition. 

PVD Reactive Sputtering – Annotated Schematic Layout 

Vacuum Chamber 

A sealed enclosure that maintains a low pressure disconnected from atmospheric gases, enabling controlled sputtering. 

Contains: target, substrate, vacuum pump and gas inlets. 

Target (Cathode) 

A solid source material (e.g., Ti, Al). 

Bombarded by energetic ions (usually Ar) from the plasma. 

Negative voltage applied (DC or RF, depending on conductivity). 

Plasma 

Created by RF or DC power. 

Contains ionised argon (Ar) gas used to sputter the target. 

Visualised as a glowing region near the target. 

Reactive Gases 

Introduced alongside Ar (e.g., O₂ for oxides, N₂ for nitrides). 

Reacts with deposited metal atoms at the growing film surface to form compounds. 

Sputtered Metal Atoms 

Ejected from the target surface due to ion collisions. 

Move toward the substrate in a straight line in vacuum. 

Gas-Metal Reaction Zone 

Metal atoms react with O₂/N₂ to form compound films like TiO₂ or AlN. Substrate (Anode or Grounded) 

Collects the resultant compound film. 

Film stoichiometry depends on gas flow, plasma energy, and reactivity. 

Reactive Sputtering FAQs

Reactive sputtering is a variation of  Physical Vapour Deposition (PVD) where a reactive gas (such as oxygen or nitrogen) is introduced into the vacuum chamber during the sputtering process. This gas reacts chemically with the sputtered metal atoms to form a compound thin film—typically an oxide, nitride, or carbide—on the substrate. 

    • Sputtering Target: A pure metal (e.g., titanium, aluminium, or silicon) is bombarded with high-energy ions (usually from an argon plasma). 
    • Reactive Gas: A gas like O₂, N₂, or CH₄ is added to the chamber. 
    • Reaction: The metal atoms ejected from the target react with the reactive gas on the substrate surface. 
    • Deposition: The resulting compound (e.g., TiO₂, AlN, Si₃N₄) is deposited as a thin film. 
        • Optical coatings (anti-reflective layers, interference filters)

        • Hard coatings (TiN or diamond-like carbon (DLC) for cutting tools)

        • Semiconductor devices (HfO or SiN for passivation or insulation)

        • Decorative coatings (colored TiN, ZrN for watches or hardware)

        • Enables deposition of compound films from metallic targets

        • Offers fine control over film composition by adjusting gas flow

        • Suitable for dense, high-quality coatings

        • Target poisoning: Excess reactive gas can form a compound layer on the target, reducing sputter efficiency.

        • Requires precise process control (gas flow, pressure, plasma power)

        AspectStandard SputteringReactive Sputtering
        Uses only inert gas
        Forms pure metal films
        Forms compound films
        Needs precise gas control